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| PMBT4401 features high current (max. 600 ma) low voltage (max. 40 v). applications industrial and consumer switching applications. description npn switching transistor in a sot23 plastic package. pnp complement: pmbt4403. marking type number marking code (1) PMBT4401 * 2x pinning pin description 1 base 2 emitter 3 collector fig.1 simplified outline (sot23) and symbol. handbook, halfpage 2 1 3 mam255 top view 2 3 1 limiting values in accordance with the absolute maximum rating system (iec 134). note 1. transistor mounted on an fr4 printed-circuit board. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 60 v v ceo collector-emitter voltage open base - 40 v v ebo emitter-base voltage open collector - 6v i c collector current (dc) - 600 ma i cm peak collector current - 800 ma i bm peak base current - 200 ma p tot total power dissipation t amb 25 c; note 1 - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
thermal characteristics note 1. transistor mounted on an fr4 printed-circuit board. characteristics t amb =25 c unless otherwise speci?ed. note 1. pulse test: t p 300 m s; d 0.02. symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 500 k/w symbol parameter conditions min. max. unit i cbo collector cut-off current i e = 0; v cb =60v - 50 na i ebo emitter cut-off current i c = 0; v eb =6v - 50 na h fe dc current gain v ce = 1 v; (see fig.2) i c = 0.1 ma 20 - i c = 1 ma 40 - i c =10ma 80 - i c = 150 ma; note 1 100 300 i c = 500 ma; v ce = 2 v; note 1 40 - v cesat collector-emitter saturation voltage i c = 150 ma; i b = 15 ma; note 1 - 400 mv i c = 500 ma; i b = 50 ma; note 1 - 750 mv v besat base-emitter saturation voltage i c = 150 ma; i b = 15 ma; note 1 - 950 mv i c = 500 ma; i b = 50 ma; note 1 - 1.2 v c c collector capacitance i e =i e = 0; v cb =5v; f=1mhz - 8pf c e emitter capacitance i c =i c = 0; v eb = 500 mv; f = 1 mhz - 30 pf f t transition frequency i c = 20 ma; v ce = 10 v; f = 100 mhz 250 - mhz switching times (between 10% and 90% levels); (see fig.3) t on turn-on time i con = 150 ma; i bon = 15 ma; i boff = - 15 ma - 35 ns t d delay time - 15 ns t r rise time - 20 ns t off turn-off time - 250 ns t s storage time - 200 ns t f fall time - 60 ns PMBT4401 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com |
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